Semiconductor Constructions and Methods of Forming Interconnects

ABSTRACT

Some embodiments include methods of forming interconnects. A first circuitry level may be formed, and a first dielectric region may be formed over such first level. A second level of circuitry may be formed over the first dielectric region. An interconnect may be formed to extend through such second level. A second dielectric region may be formed over the second level of circuitry, and a third level of circuitry may be formed over the second dielectric region. The third level of circuitry may be electrically connected to the first level of circuitry through the interconnect. Some embodiments include constructions having interconnects extending from a first level of circuitry, through an opening in a second level of circuitry, and to a third level of circuitry; with an individual interconnect including multiple separate electrically conductive posts.

RELATED PATENT DATA

This patent resulted from a divisional application of U.S. patentapplication Ser. No. 13/211,601 which was filed on Aug. 17, 2011 andwhich is incorporated by reference herein.

TECHNICAL FIELD

Semiconductor constructions and methods of forming interconnects.

BACKGROUND

Semiconductor constructions may be fabricated to have multiple levels ofcircuitry stacked over a semiconductor base. Some of the levels may bedensely packed with repeating circuit elements, such as, for example,levels containing arrays of memory devices. The memory arrays may be asubstantial portion of the circuitry, such as, for example, if thesemiconductor constructions correspond to DRAM or flash chips.Alternatively, the memory arrays may be a relatively minor portion ofthe circuitry, such as, for example, in applications in which the arrayscorrespond to cache within processors or other semiconductorconstructions which are primarily logic.

It can be desired to electrically couple two different levels ofcircuitry that are on opposing sides of a densely patterned intermediatelevel, without coupling to the intermediate level. Thus, it can bedesired to form an electrical interconnection which passes through theintermediate level, without shorting to the intermediate level. Presentmethods of fabrication may attempt to achieve such electricalinterconnection by breaking a circuit pattern within the intermediatelevel to create a path for the electrical interconnection. However, suchmethods can damage the circuitry remaining within the intermediatelevel, which can negatively impact device performance characteristics,and in some cases lead to device failure.

Sometimes dummy features are formed along the intermediate level inlocations where interconnections will pass through the intermediatelevel, and then openings are etched through the dummy features toprovide paths for the electrical interconnections. However, theintroduction of dummy features creates a new set of complications for afabrication process, consumes valuable semiconductor real estate thatcould otherwise be utilized for high-density circuitry, and in somecases does not adequately protect the intermediate level from adverseconsequences during formation of electrical interconnections throughsuch intermediate level.

It is desired to develop new methods for forming electricalinterconnections passing through densely patterned levels ofsemiconductor constructions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-9 are diagrammatic cross-sectional views of a portion of asemiconductor construction at various stages of an example embodimentmethod.

FIGS. 10-14 are diagrammatic cross-sectional views of a portion of asemiconductor construction at various stages of another exampleembodiment method.

FIGS. 15-21 are diagrammatic cross-sectional views of a portion of asemiconductor construction at various stages of another exampleembodiment method.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, the invention includes methods of forminginterconnects which extend from one level of circuitry to another, andthrough a densely-patterned region of an intermediate level. Thedensely-patterned region may have repeating electrically conductivefeatures formed to a pitch of, for example, less than or equal to about100 nanometers (nm), less than or equal to about 50 nm, or even lessthan or equal to about 35 nm. A location of an interconnect may bedefined within the densely-patterned region with a hard mask prior toformation of the electrically conductive features, and then theinterconnect may be formed during or after formation of the electricallyconductive features without adverse consequences to the electricallyconductive features. In some embodiments, dummy features of prior artmethods discussed in the “Background” section of this disclosure may beeliminated, and thus problems associated with such dummy features mayalso be eliminated. Some embodiments include novel interconnectscomprising multiple electrically conductive posts extending throughdensely-patterned regions of intermediate levels.

Example embodiments are described with reference to FIGS. 1-21.

Referring to FIG. 1, a semiconductor construction 10 is shown tocomprise a first circuitry level 13 over a semiconductor base 12. Thefirst circuitry level may comprise multiple circuit components thatextend in and out of the page relative to the cross-sectional view ofFIG. 1. An example circuit component 14 is shown to be a line extendingalong the plane of the cross-section of FIG. 1. Such line compriseselectrically conductive material 16. The electrically conductivematerial may comprise any suitable composition or combination ofcompositions; and may, for example, comprise, consist essentially of, orconsist of one or more of various metals (for instance, copper,aluminum, nickel, titanium, tungsten, etc.), metal-containing compounds(for instance, metal silicide, metal nitride, metal carbide, etc.) andconductively-doped semiconductor materials (for instance,conductively-doped silicon, conductively-doped germanium, etc.).

In subsequent processing described below, an electrical interconnectwill be formed to connect with the illustrated component 14. Althoughthe shown component is a line, in other embodiments (not shown) othercomponents may be utilized.

The circuitry of level 13 may be formed with any suitable processing.For instance, in some embodiments circuitry level 13 may comprise linesassociated with NAND architecture, and such lines may be formed withconventional processing.

The semiconductor base 12 may comprise, consist essentially of, orconsist of monocrystalline silicon, and may be referred to as asemiconductor substrate, or as a portion of a semiconductor substrate.The terms “semiconductive substrate,” “semiconductor construction” and“semiconductor substrate” mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductive substrates described above. Although base12 is shown to be homogenous, the base may comprise numerous materialsin some embodiments. For instance, base 12 may correspond to asemiconductor substrate containing one or more materials associated withintegrated circuit fabrication. In such embodiments, such materials maycorrespond to one or more of refractory metal materials, barriermaterials, diffusion materials, insulator materials, etc. Thus, theremay be one or more other levels of circuitry beneath the level 13 insome embodiments.

A dielectric region 18 is formed over the circuitry level 13. Dielectricregion 18 comprises dielectric material 19, and such may comprise anysuitable composition or combination of compositions. In someembodiments, dielectric material 19 may comprise, consist of, or consistof silicon dioxide. The dielectric material may be formed with anysuitable processing, including, for example, one or both of atomic layerdeposition (ALD) and chemical vapor deposition (CVD).

A patterned hard mask 20 is formed over dielectric region 18. Thepatterned hard mask may comprise any suitable composition or combinationof compositions; and in some embodiments may comprise, consistessentially of, or consist of silicon nitride. The patterned hard maskmay be formed with any suitable processing, including, for example, oneor both of ALD and CVD. The material of the hard mask may be initiallyformed to extend entirely across dielectric region 18, and may be thenpatterned utilizing a photolithographically-patterned photoresist mask(not shown) and suitable processing to transfer a pattern from thephotoresist mask into the material of the hard mask. Subsequently, thephotoresist mask may be removed to leave the construction of FIG. 1. Thehard mask 20 may be optional in some embodiments.

The hard mask 20 is shown to be much thinner than the dielectric region18. The hard mask 20 and dielectric region 18 may be formed to anysuitable thicknesses, depending on the compositions utilized for thehard mask and dielectric region.

The patterned hard mask has an opening 22 extending therethrough. Suchopening defines a location 24 within which an interconnect (shown inFIG. 9) will be formed to extend through the dielectric region 18 toelectrically connect with the circuit component 14.

Referring to FIG. 2, opening 22 (FIG. 1) is extended into dielectricregion 18, and subsequently an electrically conductive plug 26 is formedwithin the opening. The electrically conductive plug extends entirelythrough dielectric region 18 to directly contact an upper surface ofelectrical component 14. The electrically conductive plug may compriseany suitable electrically conductive material, such as for example, oneor more of various metals, metal-containing compounds andconductively-doped semiconductor materials.

The opening 22 (FIG. 1) may be extended into dielectric region 18 withany suitable etch. For instance, if dielectric material 19 comprisessilicon dioxide, the opening may be extended into the dielectricmaterial with a fluorine-containing etch.

The conductive plug 26 may be formed within the opening with anysuitable processing. For instance, electrically conductive material maybe formed within opening 22 and across an upper surface of hard mask 20,and then the construction 10 may be subjected to planarization (forinstance, chemical-mechanical polishing (CMP)) to form the shownconstruction in which plug 26 has an upper surface 27 coextensive withan upper surface of hard mask 20.

Referring to FIG. 3, mask material 28 is formed over patterned hard mask20 and conductive plug 26. The mask material may comprise any suitablecomposition or combination of compositions, and in some embodiments maycomprise, consist essentially of, or consist of silicon oxide. The maskmaterial 28 may be selectively etched relative to hard mask 20 insubsequent processing (described below with reference to FIG. 4), andthus it may be desired that the mask material comprise a compositionselectively etchable relative to the material of the patterned hard mask20. In some embodiments, an entirety of mask material 28 is ultimatelyremoved, and in such embodiments the mask material 28 may be referred toas a sacrificial material.

A patterned mask 30 is formed over mask material 28. The patterned mask30 may be referred to as a second patterned mask to distinguish it fromthe patterned mask 20.

Patterned mask 30 comprises a plurality of spaced-apart features 32,which may be referred to as template structures. The mask 30 may beformed with any suitable processing, including, for example,photolithographic processing either alone, or in combination with pitchmultiplication methodologies. In some embodiments, the features 32 maybe densely-patterned, and may be formed to a pitch, P, of less than orequal to about 100 nm, less than or equal to about 50 nm, or even lessthan or equal to about 35 nm.

Referring to FIG. 4, a pattern of the template structures 32 (FIG. 3) istransferred into mask material 28 to form the mask material into aplurality of masking features 34 having the pitch P, and subsequentlythe template structures are removed. Some of the masking features 34 aredirectly over and in contact with patterned hard mask 20, and others ofthe masking features are directly over and in contact with conductiveplug 26. The masking features are spaced from one another by gaps 36(only some of which are labeled).

A patterned mask 40 is formed over the masking features 34. Thepatterned mask covers most of the masking features, but leaves maskingfeatures within the location 24 (wherein an interconnect will ultimatelybe formed) exposed within an opening 42 that extends through thepatterned mask. The mask 40 may comprise any suitable composition, andin some embodiments may correspond to photolithographically-patternedphotoresist.

Referring to FIG. 5, the masking features 34 exposed within opening 42(FIG. 4) are removed, and subsequently the patterned mask 40 (FIG. 4) isremoved. The removal of the exposed masking features forms a gap 44extending across conductive plug 26. In some embodiments, gaps 36 may bereferred to as first gaps, and gap 44 may be referred to as a secondgap.

Although the illustrated embodiment forms mask 40 (FIG. 4) afterpatterning the features 34 from material 28, in other embodiments themask 40 may be provided over the template structures 32 (FIG. 3) and theopening 44 may be formed prior to transferring a pattern from thetemplate structures into the underlying material 28. Thus, mask 40 maybe applied before pattern transfer into material 28 in some embodiments,and after pattern transfer into material 28 in other embodiments.

Referring to FIG. 6, electrically conductive material 46 is formedacross masking features 34 and within the first and second gaps 36 and44.

Referring to FIG. 7, construction 10 is subjected to planarization (forinstance, CMP) to remove electrically conductive material 46 from overthe masking features 34. Such patterns the conductive material 46 into aconductive structure 48 directly over and in contact with conductiveplug 26, and into a plurality of repeating electrically conductivefeatures 50. The electrically conductive features 50 form a secondcircuitry level 15. In the shown embodiment, the electrically conductivefeatures 50 are formed to the high-density pitch P; and accordingly maybe formed to a pitch of less than or equal to about 100 nm, less than orequal to about 50 nm, or even less than or equal to about 35 nm.

The electrically conductive features 50 may be any suitable features,and in some embodiments may be lines extending into and out of the pagerelative to the cross-sectional view of FIG. 7. Accordingly, theconductive features 50 may be lines which extend along a direction whichis substantially orthogonal to the direction of the line 14 within thefirst level 13 of circuitry.

The conductive structure 48 and the plug 26 together form a portion ofan interconnect extending to the upper surface of component 14. Thestructure 48 is a portion of the interconnect that extends through thedensely-patterned circuitry of circuit level 15, and in the embodimentof FIGS. 1-7 such portion is formed simultaneously with formation of theelectrical components 50 of such densely-patterned circuitry. Thus, suchportion of the interconnect may comprise an identical composition as theelectrical components 50 of the densely-patterned circuitry.

Referring to FIG. 8, masking features 34 (FIG. 7) are removed. Althoughthe masking features are removed in the shown embodiment, if the maskingfeatures comprise suitable electrically insulative material they may beleft in a finished construction in other embodiments to provideelectrical isolation between adjacent components.

Referring to FIG. 9, a dielectric region 52 is formed over components 50and conductive structure 48, and subsequently an opening 54 is etchedthrough the dielectric region to an upper surface of the conductivestructure 48. The opening 54 may be formed with any suitable processing,including, for example, utilization of a photolithographically-patternedphotoresist mask (not shown) to define a location of the opening, anetch through material 52 to form the opening, and subsequent removal ofthe photoresist mask.

The opening 54 is filled with electrically conductive material 56. Suchelectrically conductive material may comprise any suitable compositionor combination of compositions; including, for example, one or more ofvarious metals, metal-containing compounds, and conductively-dopedsemiconductor materials. The conductive material 56 has a planarizedupper surface in the shown embodiment, and such may be formed by, forexample, CMP to remove material 56 from over the dielectric region 52.

A circuit component 58 is formed over and in direct contact withelectrically conductive material 56. The circuit component 58 may bepart of a third circuitry level 17 which is formed over the dielectricregion 52. Thus, the conductive plug 26, conductive structure 48, andconductive material 56 together form an electrically conductiveinterconnect which connects a circuit component 14 within the firstcircuitry level 13 to a circuit component 58 within the third circuitrylevel 17. The interconnect extends through the densely-patternedcircuitry of the second level 15, and extends within the location 24defined by the patterned hard mask 20. The conductive portions of theinterconnect corresponding to the conductive plug 26, conductivestructure 48 and conductive material 56 may comprise the samecomposition as one another, or one or more of such conductive portionsmay comprise a different composition than one or more others of suchconductive portions.

Although a single interconnect is shown formed through thedensely-patterned circuit level 15, in other embodiments multipleinterconnects may be formed to extend through the densely-patternedcircuit level with analogous processing. Some of such interconnects mayextend to levels other than the illustrated levels 13 and 17 directlyadjacent level 15. Further, in some embodiments there may be multipledensely-patterned levels that are stacked one atop the other, andprocessing analogous to that of FIGS. 1-9 may be utilized to forminterconnects that extend through more than one densely-patterned level.

Another example embodiment is described with reference to FIGS. 10-14.Referring to FIG. 10, a semiconductor construction 10 a is shown at aprocessing stage subsequent to that of FIG. 1. The constructioncomprises the semiconductor base 12, circuitry level 13, dielectricregion 18 and patterned hard mask 20 described above with reference toFIG. 1, with the dielectric region comprising the dielectric material19. The patterned hard mask has the opening 22 extending therethroughwhich defines the location 24 where an interconnect will be formed.

The construction 10 a is shown at a processing stage analogous to thatof FIG. 3, and thus the construction comprises the mask material 28 andpatterned mask 30 described above with reference to FIG. 3. However, theembodiment of FIG. 10 does not comprise a conductive plug analogous tothe plug 26 shown in FIG. 3. The patterned mask 30 comprises thetemplate structures 32 formed to the pitch P. In some embodiments, thepatterned masks 20 and 30 may be referred to as first and secondpatterned masks, respectively, to distinguish them from one another.

As discussed above with reference to FIG. 3, mask material 28 may beconsidered to be a sacrificial material in some embodiments, in that theentirety of material 28 may be removed after utilizing material 28 topattern circuit components. However, in other embodiments material 28may have a suitable composition so that some of the material may remainin a finished construction to provide isolation between adjacent circuitcomponents.

Referring to FIG. 11, a pattern of the template structures 32 (FIG. 3)is transferred into underlying materials 19 and 28 with an etchselective for materials 19 and 28 relative to materials of the hard mask20 and conductive component 14, and then the template structures areremoved. Such forms first gaps 61 extending to hard mask 20, and formssecond gaps 63 extending to conductive component 14. Alternativelyconsidered, material 28 is patterned into a plurality of maskingfeatures 60 directly over the patterned hard mask 20, and the materials19 and 28 are together patterned into a plurality of masking features 62directly over the component 14 within the location 24 where theinterconnect will be formed. The masking features 60 are formed on thesame pitch P that the template structures 32 (FIG. 10) were formed on.

Referring to FIG. 12, electrically conductive material 46 is formedwithin the first and second gaps 61 and 63, and subjected toplanarization to form a planarized surface 65 extending across theconductive material 46 and the mask material 28.

Referring to FIG. 13, masking features 60 and 62 (FIG. 12) are removed.Although the masking features 60 and 62 are removed in the shownembodiment, in other embodiments the masking features may comprisesuitable compositions so that such masking features may remain aselectrically insulative structures in a finished construction.

The remaining conductive material 46 is patterned into a plurality ofelectrically conductive posts 64 directly over and in contact withcircuit component 14, and into the plurality of repeating electricallyconductive features 50. The electrically conductive features 50 form thesecond circuitry level 15. In the shown embodiment, the electricallyconductive features 50 are formed to the high-density pitch P; andaccordingly may be formed to a pitch of less than or equal to about 100nm, less than or equal to about 50 nm, or even less than or equal toabout 35 nm. The electrically conductive posts 64 are separated from oneanother, and in the shown embodiment are also along the pitch P.

The electrically conductive features 50 may be any suitable features,and in some embodiments may be lines extending into and out of the pagerelative to the cross-sectional view of FIG. 13. Accordingly, theconductive features 50 may be lines which extend along a direction whichis substantially orthogonal to the direction of the line 14 within thefirst level 13 of circuitry.

The conductive posts 64 form a portion of an interconnect extending tothe upper surface of the circuit component 14. In the embodiment ofFIGS. 10-13 such posts are formed simultaneously with formation of theelectrical components 50 of the densely-patterned circuitry. Thus, theportion of the interconnect corresponding to posts 64 may comprise anidentical composition as the electrical components 50 of thedensely-patterned circuitry.

Referring to FIG. 14, the dielectric region 52 is formed over components50 and posts 64, and subsequently an opening 66 is etched through thedielectric region to upper surfaces of the posts. The opening 66 may beformed with any suitable processing, including, for example, utilizationof a photolithographically-patterned photoresist mask (not shown) todefine a location of the opening, an etch through material 52 to formthe opening, and subsequent removal of the photoresist mask. The opening66 may extend to below upper surfaces of the posts, as shown.

The opening 66 is filled with the electrically conductive material 56.The electrically conductive material 56 has a planarized upper surfacein the shown embodiment, and such may be formed by, for example, CMP toremove material 56 from over the dielectric region 52.

The circuit component 58 is formed over and in direct contact withelectrically conductive material 56. The circuit component 58 is part ofan illustrated third circuitry level 17 which is formed over thedielectric region 52. Thus, the posts 64 and conductive material 56together form an electrically conductive interconnect which connects thecircuit component 14 within the first circuitry level 13 to the circuitcomponent 58 within the third circuitry level 17. The interconnectextends through the densely-patterned circuitry of the second level 15,and extends within the location 24 defined by the patterned hard mask20. The conductive posts 64 may comprise the same composition as theconductive material 56, or may comprise a different composition relativeto conductive material 56.

The construction 10 a of FIG. 14 may be considered to comprise anintermediate circuitry level 15 between the levels 13 and 17, with suchintermediate level having a high-density pattern of repeatingelectrically conductive features 50. The construction comprises a breakin the pattern corresponding to an opening through the pattern, andcomprises an interconnect extending through such opening to electricallyconnect the circuit component 14 within level 13 to the circuitcomponent 58 within level 17. The interconnect comprises a plurality ofelectrically conductive posts 64 extending through the opening in thehigh-density pattern, and comprises the electrically conductivestructure 68 intermediate the posts 64 and the component 58.

In some embodiments, the multi-post interconnect shown in FIG. 14 may berepresentative of a plurality of interconnects fabricated in asemiconductor construction to pass through one or more intermediatecircuit levels of the construction.

Another example embodiment is described with reference to FIGS. 15-21.Referring to FIG. 15, a semiconductor construction 10 b is shown at aprocessing stage subsequent to that of FIG. 10. The constructioncomprises the semiconductor base 12, circuitry level 13, dielectricregion 18 and patterned hard mask 20, with the patterned mask having theopening 22 extending therethrough and defining the location 24 where aninterconnect will be formed. The construction 10 b also comprises themask material 28, and the patterned mask 30, with the patterned mask 30comprising the template structures 32 formed to the pitch P. Thetemplate structures are spaced from one another by gaps 72. The maskmaterial 28 may be a dielectric material, such as silicon dioxide.

The construction 10 b has another patterned mask 70 over the templatestructures 32. The patterned mask 70 may comprise any suitablecomposition or combination of compositions; and in some embodiments maycomprise photolithographically-patterned photoresist. The mask 70 coversa first set of the template structures, while leaving a second set ofthe template structures uncovered. The mask material 28 may beconsidered to comprise a first portion 71 which is not covered bymaterial of mask 70, and a second portion 73 which is covered by thematerial of mask 70.

In some embodiments, the masks 20, 30 and 70 may be referred to asfirst, second and third masks, respectively, to distinguish them fromone another.

Referring to FIG. 16, the gaps 72 along the uncovered second set oftemplate structures 32 are extended down to hard mask 20 to pattern thefirst portion 71 of mask material 28 into masking features 34 whilematerial of mask 70 protects the second portion 73 of mask material 28from being etched. The template structures 32 are shown remaining overthe masking features 34 at the processing stage of FIG. 16. In otherembodiments, the template structures 32 may be removed during or afterformation of gaps 72 so that such template structures are not present atthe processing stage of FIG. 16.

Referring to FIG. 17, electrically conductive material 46 is formedwithin gaps 72 (FIG. 16). Subsequently, planarization is utilized toform a planarized upper surface 75 extending across materials 28 and 46,and to thereby pattern material 46 into electrically conductivestructures 50. The electrically conductive structures are formed to thehigh-density pitch, P; and form a second level 15 of circuitry over thedielectric region 18.

The template structures 32 (FIG. 16) and the mask 70 (FIG. 16) areremoved in forming the shown processing stage of FIG. 17. The templatestructures 32 and mask 70 may be removed by the planarization utilizedto form planarized upper surface 75, or may be removed prior to suchplanarization, and in some embodiments may be removed prior to formingthe metal 46 within the gaps 72.

Referring to FIG. 18, the dielectric region 52 is formed over planarizedupper surface 75. In the shown embodiment, the mask material 28 remainsbetween electrical components 50 at the processing stage of FIG. 18. Inother embodiments, the mask material may be a sacrificial material, andmay be removed prior to formation of the dielectric region 52 so thatthe material of the dielectric region 52 replaces material 28 betweenthe electrically conductive structures 50.

An opening 90 is patterned through the portion 73 of material 28 thathad been covered by mask 70 (FIG. 15). Opening 90 may be formed with anysuitable processing, including, for example, utilization of aphotolithographically-patterned photoresist mask (not shown) to define alocation of the opening, transferring a pattern from the photoresistmask into materials underlying the mask, and then removing thephotoresist mask to leave the shown construction. The opening 90 extendsto an upper surface of the circuit component 14.

Referring to FIG. 19, electrically conductive material 92 is formedwithin opening 90 and across an upper surface of the dielectric region52. The conductive material may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise,consist essentially of, or consist of one or more of various metals,metal-containing compounds, and conductively-doped semiconductormaterials.

Referring to FIG. 20, construction 10 b is subjected to planarization toremove material 90 from over the dielectric region 52.

Referring to FIG. 21, the third level 17 of circuitry is formed over thedielectric region 52, with a circuit component 58 of the third levelbeing in electrical contact with conductive material 92. Thus, material92 forms an interconnect 94 that extends from circuitry of the upperlevel 17 to circuitry of the lower level 13. The interconnect 94 extendsthrough the second level 15 of circuitry in the location 24 defined bypatterned hard mask 20.

The embodiment of FIGS. 15-21 forms an entirety of the interconnect 94after formation of the electrical components 50, rather than forming anyof the interconnect during formation of such electrically conductivecomponents, in contrast to the previous embodiments discussed herein.Thus, the embodiment of FIGS. 15-21 may enable the entirety ofinterconnect 94 to be formed of a different conductive material than isutilized for the circuit components 50.

Although the hard mask 20 is shown in the first embodiment of FIGS. 1-9,the second embodiment of FIGS. 10-14 and the third embodiment of FIGS.15-21, the hard mask may be optional in some embodiments. For instance,the embodiments of FIGS. 1-9 and 15-21 may use a timed etch of material28, or selectivity between materials 28 and 19, instead of using thehard mask to stop the etch of material 28 at a desired location.Further, if some over-etch occurs during the etching of material 28,such may not be problematic.

The interconnect-forming methodology described above may be utilized inany applications in which it is desired to form an interconnectextending through a densely-integrated level of circuitry, including,for example, NAND applications, DRAM applications, logic applications,etc.

The semiconductor constructions discussed above may be incorporated intoelectronic systems. The electronic systems may be any of a broad rangeof systems, such as, for example, clocks, televisions, cell phones,personal computers, automobiles, industrial control systems, aircraft,etc.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present.

Some embodiments include a method of forming an interconnect. A firstdielectric region is formed over a first level of circuitry. A patternedhard mask is formed over the first dielectric region to define alocation of an interconnect that extends through the first dielectricregion to electrically connect with a circuit component of the firstlevel of circuitry. A second level of circuitry is formed over the hardmask. The second level comprises repeating electrically conductivefeatures. The interconnect is formed to extend through the second levelof circuitry and within the defined location. A second dielectric regionis formed over the second level of circuitry. A third level of circuitryis formed over the second dielectric region. The third level ofcircuitry is electrically connected to the first level of circuitrythrough the interconnect.

Some embodiments include a method of forming an interconnect. A firstdielectric region is formed over a first level of circuitry. A secondlevel of circuitry is formed over the first dielectric region. Thesecond level comprises repeating electrically conductive features. Aninterconnect is formed to extend through the second level of circuitryand to electrically connect with the first level of circuitry. At leasta portion of the interconnect is formed while forming the electricallyconductive features. A second dielectric region is formed over thesecond level of circuitry. A third level of circuitry is formed over thesecond dielectric region. The third level of circuitry is electricallyconnected to the first level of circuitry through the interconnect.

Some embodiments include a method of forming an interconnect. A firstdielectric region is formed over a first level of circuitry. A patternedmask is formed over the first dielectric region. The mask comprisesmasking features spaced from one another by gaps. Some of the gaps arefirst gaps corresponding to locations of electrically conductivefeatures of a second level of circuitry, and at least one of the gaps isa second gap corresponding to a location of an interconnect that extendsthrough the second level of circuitry. Electrically conductive materialis formed within the first and second gaps and across the maskingfeatures. The electrically conductive material is planarized to removethe electrically conductive material from over the masking featureswhile leaving the electrically conductive material within the first andsecond gaps. A second dielectric region is formed over the second levelof circuitry. A third level of circuitry is formed over the seconddielectric region. The third level of circuitry is electricallyconnected to the first level of circuitry through the interconnect.

Some embodiments include semiconductor constructions. A first level ofcircuitry is over a semiconductor base. A first dielectric region isover the first level of circuitry. A second level of circuitry is overthe first level of circuitry. The second level comprises a pattern ofrepeating electrically conductive features and comprises an openingthrough the pattern. The high-density pattern is on a pitch of less thanor equal to 100 nm. A second dielectric region is over the second levelof circuitry. A third level of circuitry is over the second dielectricregion. Multiple separate electrically conductive posts extend from thethird level of circuitry to the first level of circuitry through theopening.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A semiconductor construction, comprising: a first level of circuitry;a first dielectric region over the first level of circuitry; a secondlevel of circuitry over the first level of circuitry, the second levelcomprising a pattern of repeating electrically conductive features andcomprising an opening through the pattern; a second dielectric regionover the second level of circuitry; a third level of circuitry over thesecond dielectric region; and multiple separate electrically conductiveposts extending from the third level of circuitry to the first level ofcircuitry through the opening.
 2. The construction of claim 1 furthercomprising at least one level of circuitry between the first and thirdlevels in addition to the second level of circuitry.
 3. The constructionof claim 1 wherein the first dielectric region comprises silicondioxide; wherein silicon nitride is over the silicon dioxide; andwherein the electrically conductive features comprise electricallyconductive lines directly against said silicon nitride.
 4. The method ofclaim 1 wherein the repeating electrically conductive features arearranged to a pitch of less than or equal to about 100 nm.
 5. Theconstruction of claim 4 wherein the pitch is less than or equal to about50 nm.
 6. The construction of claim 1 wherein the repeating electricallyconductive features and regions of the electrically conductive posts areof a common composition as one another.
 7. The construction of claim 1wherein at least a portion of an interconnect that extends through thesecond level of circuitry and electrically connects with the first levelof circuitry, the interconnect comprising the conductive posts, whereinthe repeating electrically conductive features of the second level arelaterally outward of the interconnect and not contacting theinterconnect along a cross-section.
 8. The construction of claim 7wherein the third level of circuitry comprises a circuitry componentconnected to a circuitry component within the first level of circuitrythrough the interconnect.
 9. The construction of claim 1 wherein thefirst level of circuitry comprises a line of the first circuitry levelextending along a first direction; and wherein the electricallyconductive features of the second circuitry level are lines extendingalong a second direction which is substantially orthogonal to the firstdirection.
 10. The construction of claim 8 wherein the line of the firstcircuitry level comprises one or more members of the group consisting ofcopper, aluminum, nickel, titanium, tungsten, metal silicide, metalnitride, metal carbide and conductively doped semiconductive materials.11. The construction of claim 1 wherein electrically insulative materialutilized as masking features during formation of the construction areretained in a final structure.
 12. A semiconductor construction,comprising: a first level of circuitry; a first dielectric region overthe first level of circuitry; a second level of circuitry over the firstlevel of circuitry, the second level comprising a pattern of repeatingelectrically conductive features and comprising an opening through thepattern; a second dielectric region over the second level of circuitry;a third level of circuitry over the second dielectric region; and aconductive plug forming part of an interconnect that extends from thethird level of circuitry to the first level of circuitry, the repeatingelectrically conductive features of the second level being laterallyoutward of the interconnect and not contacting the interconnect along across-section.
 13. The method of claim 12 wherein the repeatingelectrically conductive features are arranged to a pitch of less than orequal to about 100 nm.
 14. The construction of claim 13 wherein thepitch is less than or equal to about 50 nm.
 15. A semiconductorconstruction, comprising: a first level of circuitry; a first dielectricregion over the first level of circuitry; a second level of circuitryover the first level of circuitry, the second level comprising a patternof repeating electrically conductive features having a pitch of lessthan less than or equal to 100 nm and comprising an opening through thepattern, the repeating electrically conductive features consisting ofnon-dummy features; a second dielectric region over the second level ofcircuitry; a third level of circuitry over the second dielectric region;and one or more interconnects that extends from the third level ofcircuitry to the first level of circuitry.
 16. The semiconductorconstruction of claim 15 wherein the one or more interconnects eachcomprise a conductive plug, a conductive structure over the conductiveplug and a conductive material over the conductive structure.
 17. Thesemiconductor construction of claim 16 wherein the conductive plugcomprises one or more metals, one or more metal containing compounds,one or more conductively doped semiconductor materials, or combinationsthereof.
 18. The semiconductor construction of claim 16 wherein theconductive material comprises one or more metals, one or more metalcontaining compounds, one or more conductively doped semiconductormaterials, or combinations thereof.
 19. The semiconductor constructionof claim 16 wherein the conductive structure comprises a material thatis also comprised by the electrically conductive plug.
 20. Thesemiconductor construction of claim 16 wherein the repeatingelectrically conductive features of the second level are laterallyoutward of the interconnect and do not contact the interconnect along across-section.